Experiment No. 1 Objective To study SCR/TRIC/ DIAC/ MOSFET/IGBT Characteristics Objectives 1. To understand performance of SCR/TRIAC/DIAC/MOSFETS and IGBT. 2. To understand the latching current, holding current. 3. To identify the area of application. Apparatus Required: S.No. APPARATUS RANGE QUANTITY 1 SCR, TRIAC, DIAC, MOSFETS and IGBTs Power Circuit kit NA 1 2 Power Supplies, 0-30V 1 3 Wattage Resistors --- NA 4 Ammeter 0—10A 1 5 Voltmeter 0-300V 1 Theory An SCR is a three terminal, four layer latching device. The three terminals are anode, cathode and gate. When the anode is more positive with respect to the cathode. Junction’s j1, j3 are forward biased and the junction j2 is reverse biased. Only a small leakage current flows through the device. The device is said to be in the forward blocking state or OFF state. When the anode to cathode voltage is increased to break
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